N-channel enhancement-mode lateral MOSFET designed for W-CDMA base station applications from 2110 to 2170 MHz, suitable for TDMA, CDMA, and multicarrier amplifiers in Class AB operation. Packaged in a NI-780S case (CASE 465A-06, STYLE 1) with dimensions of 20.45 to 20.70 mm in length, 9.65 to 9.91 mm in width, and 1.45 to 1.70 mm in height. Capable of handling 10:1 VSWR at 28 Vdc, 2140 MHz with 100 W CW output power. Characterized with 15.9 dB power gain, 27.6% drain efficiency, -37 dBc IM3, and -39.5 dBc ACPR under 2-carrier W-CDMA conditions at 23 W average output power. Rated for drain-source voltage up to 68 Vdc, gate-source voltage up to 12 Vdc, and maximum case temperature of 150 °C. Integrated ESD protection meets JESD22-A114 Class 3A (HBM), EIA/JESD22-A115 Class A (MM), and JESD22-C101 Class IV (CDM). RoHS compliant.
RF Mosfet LDMOS 28V 950mA 2.11GHz ~ 2.17GHz 15.9dB 23W NI-780S
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | MRF6S21100HSR5-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | NI-780S |
