NXP Semiconductors TRANSISTORS - Transistors (BJT) - Single - BUT12AI BUT12AI

Manufacturer: NXP
Win Source Part Number: 039754-BUT12AI
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 450V
Max Vce (sat): 1.5V @ 860mA, 5A
Collector Cut-off Current(Max): 1mA
Typical Gain (hFE) (Min): 14 @ 1A, 5V
Maximum Power Dissipation: 110W
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

TRANS NPN 450V 8A TO220AB Product overview: BUT12AI from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 8A. Search-friendly keywords include transistor, BJT, switching, amplification, 450V, 8A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BUT12AI can be used for catalog matching and distributor lookup.