N-channel 80 V MOSFET designed for automotive applications, fabricated using TrenchMOS technology and qualified to AEC-Q101 standard. Packaged in an LFPAK56 (Power-SO8) surface-mount case, it is rated for a maximum junction temperature of 175 °C and features repetitive avalanche capability. Continuous drain current is 84 A at 25 °C mounting base temperature with a drain-source on-state resistance of 8.1 mΩ at 25 °C, 5 V gate-source voltage, and 25 A drain current. The gate-source threshold voltage exceeds 0.5 V at 175 °C, enabling true logic-level drive. Total power dissipation is 194 W at 25 °C mounting base temperature.
Manufacturer: NXP Semiconductors
Win Source Part Number: 1325301-BUK9Y11-80EX
Category: Discrete Semiconductor Products>Transistors
Packaging: Bulk
Standard Package: 1
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 194W (Tc)
Supplier Device Package: LFPAK56, Power-SO8
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6506 pF @ 25 V
Vgs (Max): ±10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: SC-100, SOT-669
ECCN: EAR99
Fake Threat In the Open Market: 69
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 2156-BUK9Y11-80EX-95
Drive Voltage (Max Rds On, Min Rds On): 5V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
| Win Source Electronics | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 1325301-BUK9Y11-80EX |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single |
| Polarity | N-Channel |
