NXP Semiconductors Single FETs, MOSFETs BUK9E3R7-60E,127

N-channel TrenchMOS logic level MOSFET in an I2PAK (SOT226) package rated for 60 V drain-source voltage and 120 A continuous drain current at 25 °C, with a maximum power dissipation of 293 W and a junction temperature rating of 175 °C. AEC Q101 compliant, repetitive avalanche rated, and suitable for automotive applications including motor and solenoid control.