NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9E08-55B BUK9E08-55B

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 039750-BUK9E08-55B
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 203W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 45nC @ 5V
Max Input Capacitance: 5280pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 7 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

MOSFET N-CH 55V 75A I2PAK Product overview: BUK9E08-55B from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 75A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BUK9E08-55B can be used for catalog matching and distributor lookup.