Manufacturer: Nexperia USA Inc.
Win Source Part Number: 131883-BUK9609-75A,1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 230W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 8840pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
TRANSISTOR >30MHZ Product overview: BUK9609-75A,118 from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30MHZ. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30MHZ, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK9609-75A,118 can be used for catalog matching and distributor lookup.
TRANSISTOR >30MHZ
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 131883-BUK9609-75A,118 | 278-BUK9609-75A,118 | BUK9609-75A,118 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK9609-75A,118 | 30MHZ MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | ||
| V(BR)DSS | 75 volts | ||
| PD | 230000 milliwatts | 230000 milliwatts |