NXP Semiconductors Single FETs, MOSFETs BUK768R1-40E118

Description
NOW NEXPERIA BUK768R1-100E - POW
Description
NOW NEXPERIA BUK768R1-100E - POW
Datasheet
Datasheet Summary
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The BUK768R1-40E is an N-channel TrenchMOS standard level FET in a D2PAK (SOT404) package, designed for high-performance automotive applications such as motor, lamp, and solenoid control. It is rated for a drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C mounting base temperature, with a maximum power dissipation of 96 W. The device features a drain-source on-state resistance of 5.6 to 7.2 mΩ at 10 V gate-source voltage and 25 °C, and is compliant with AEC Q101. It supports repetitive avalanche operation and is rated for a junction temperature up to 175 °C.

Datasheet Summary
Powered by GS/AI

The BUK768R1-40E is an N-channel TrenchMOS standard level FET in a D2PAK (SOT404) package, designed for high-performance automotive applications such as motor, lamp, and solenoid control. It is rated for a drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C mounting base temperature, with a maximum power dissipation of 96 W. The device features a drain-source on-state resistance of 5.6 to 7.2 mΩ at 10 V gate-source voltage and 25 °C, and is compliant with AEC Q101. It supports repetitive avalanche operation and is rated for a junction temperature up to 175 °C.

Suppliers

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Supplier Links
Single FETs, MOSFETs - BUK768R1-40E118 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BUK768R1-40E118
Single FETs, MOSFETs BUK768R1-40E118
NOW NEXPERIA BUK768R1-100E - POW

NOW NEXPERIA BUK768R1-100E - POW

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number BUK768R1-40E118
Product Name Single FETs, MOSFETs
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