NXP Semiconductors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single BSV52,215

Description
Manufacturer: NXP Semiconductors Win Source Part Number: 1325635-BSV52,215 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Packaging: Bulk Standard Package: 1 Mounting: Surface Mount Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 400nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Frequency - Transition: 500MHz Supplier Device Package: TO-236AB Temperature Range - Operating: 150°C (TJ) Case / Package: TO-236-3, SC-59, SOT-23-3 Fake Threat In the Open Market: 71 REACH Status: REACH Unaffected Other Part Number: 2156-BSV52,215-954 Moisture Sensitivity Level (MSL): 1 (Unlimited)
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Description
Manufacturer: NXP Semiconductors Win Source Part Number: 1325635-BSV52,215 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Packaging: Bulk Standard Package: 1 Mounting: Surface Mount Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 400nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Frequency - Transition: 500MHz Supplier Device Package: TO-236AB Temperature Range - Operating: 150°C (TJ) Case / Package: TO-236-3, SC-59, SOT-23-3 Fake Threat In the Open Market: 71 REACH Status: REACH Unaffected Other Part Number: 2156-BSV52,215-954 Moisture Sensitivity Level (MSL): 1 (Unlimited)
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Datasheet
Datasheet Summary
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The BSV52 is an NPN silicon transistor designed for high-speed saturated switching in portable equipment. It is housed in a SOT23 plastic surface-mount package measuring 2.9 mm by 1.3 mm. The device has a maximum collector-emitter voltage of 12 V, a continuous collector current of 100 mA, and a total power dissipation of 250 mW at 25 °C. It achieves a transition frequency of up to 500 MHz and has a collector-emitter saturation voltage of 400 mV at 50 mA collector current and 5 mA base current. The transistor meets IEC 60134 for limiting values and operates with a junction temperature up to 150 °C.

Datasheet Summary
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The BSV52 is an NPN silicon transistor designed for high-speed saturated switching in portable equipment. It is housed in a SOT23 plastic surface-mount package measuring 2.9 mm by 1.3 mm. The device has a maximum collector-emitter voltage of 12 V, a continuous collector current of 100 mA, and a total power dissipation of 250 mW at 25 °C. It achieves a transition frequency of up to 500 MHz and has a collector-emitter saturation voltage of 400 mV at 50 mA collector current and 5 mA base current. The transistor meets IEC 60134 for limiting values and operates with a junction temperature up to 150 °C.

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1325635-BSV52,215 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1325635-BSV52,215
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1325635-BSV52,215
Manufacturer: NXP Semiconductors Win Source Part Number: 1325635-BSV52,215 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Packaging: Bulk Standard Package: 1 Mounting: Surface Mount Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 400nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Frequency - Transition: 500MHz Supplier Device Package: TO-236AB Temperature Range - Operating: 150°C (TJ) Case / Package: TO-236-3, SC-59, SOT-23-3 Fake Threat In the Open Market: 71 REACH Status: REACH Unaffected Other Part Number: 2156-BSV52,215-954 Moisture Sensitivity Level (MSL): 1 (Unlimited)

Manufacturer: NXP Semiconductors
Win Source Part Number: 1325635-BSV52,215
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Packaging: Bulk
Standard Package: 1
Mounting: Surface Mount
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 500MHz
Supplier Device Package: TO-236AB
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-236-3, SC-59, SOT-23-3
Fake Threat In the Open Market: 71
REACH Status: REACH Unaffected
Other Part Number: 2156-BSV52,215-954
Moisture Sensitivity Level (MSL): 1 (Unlimited)

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 1325635-BSV52,215
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
Polarity NPN
Package Type SOT3; SOT23; TO-236-3, SC-59, SOT-23-3
Packing Method Bulk; Bulk
IC(max) 100 milliamps
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