NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS87,115 BSS87,115

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 099437-BSS87,115 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 580mW (Ta), 12.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-89-3 Dimension: TO-243AA Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 400mA (Ta) Gate-Source Threshold Voltage: 2.8V @ 1mA Max Input Capacitance: 120pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 400mA, 10V Alternative Parts (Cross-Reference): BSS87; BSS87/T1; Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 099437-BSS87,115 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 580mW (Ta), 12.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-89-3 Dimension: TO-243AA Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 400mA (Ta) Gate-Source Threshold Voltage: 2.8V @ 1mA Max Input Capacitance: 120pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 400mA, 10V Alternative Parts (Cross-Reference): BSS87; BSS87/T1; Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS87,115 - 099437-BSS87,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS87,115
099437-BSS87,115
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS87,115 099437-BSS87,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 099437-BSS87,115 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 580mW (Ta), 12.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-89-3 Dimension: TO-243AA Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 400mA (Ta) Gate-Source Threshold Voltage: 2.8V @ 1mA Max Input Capacitance: 120pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 400mA, 10V Alternative Parts (Cross-Reference): BSS87; BSS87/T1; Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Industrial

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 099437-BSS87,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 580mW (Ta), 12.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-89-3
Dimension: TO-243AA
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 400mA (Ta)
Gate-Source Threshold Voltage: 2.8V @ 1mA
Max Input Capacitance: 120pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 400mA, 10V
Alternative Parts (Cross-Reference): BSS87; BSS87/T1;
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 099437-BSS87,115
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSS87,115
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts
PD 580 to 12500 milliwatts
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