NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP126,135 BSP126,135

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 098613-BSP126,135 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 375mA (Ta) Gate-Source Threshold Voltage: 2V @ 1mA Max Input Capacitance: 120pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 Ohm @ 300mA, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 098613-BSP126,135 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 375mA (Ta) Gate-Source Threshold Voltage: 2V @ 1mA Max Input Capacitance: 120pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 Ohm @ 300mA, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP126,135 - 098613-BSP126,135 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP126,135
098613-BSP126,135
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP126,135 098613-BSP126,135
Manufacturer: Nexperia USA Inc. Win Source Part Number: 098613-BSP126,135 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 375mA (Ta) Gate-Source Threshold Voltage: 2V @ 1mA Max Input Capacitance: 120pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 Ohm @ 300mA, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 098613-BSP126,135
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 375mA (Ta)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Input Capacitance: 120pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 Ohm @ 300mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 098613-BSP126,135
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP126,135
Polarity N-Channel; N-Channel
V(BR)DSS 250 volts
PD 1500 milliwatts
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