NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH207,135 BSH207,135

Description
Small Signal Field-Effect Transistor, 1.52A, 12V, P-Channel, MOSFET
Request a Quote Datasheet
Description
Small Signal Field-Effect Transistor, 1.52A, 12V, P-Channel, MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - BSH207,135 - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor, 1.52A, 12V, P-Channel, MOSFET

Small Signal Field-Effect Transistor, 1.52A, 12V, P-Channel, MOSFET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH207,135 - 096612-BSH207,135 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH207,135
096612-BSH207,135
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH207,135 096612-BSH207,135
Manufacturer: Nexperia USA Inc. Win Source Part Number: 096612-BSH207,135 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 417mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SC-74, SOT-457 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 1.52A (Ta) Gate-Source Threshold Voltage: 600mV @ 1mA Max Gate Charge: 8.8nC @ 4.5V Max Input Capacitance: 500pF @ 9.6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 120 mOhm @ 1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 096612-BSH207,135
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 417mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SC-74, SOT-457
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 1.52A (Ta)
Gate-Source Threshold Voltage: 600mV @ 1mA
Max Gate Charge: 8.8nC @ 4.5V
Max Input Capacitance: 500pF @ 9.6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 120 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSH207,135 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSH207,135
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSH207,135
MOSFET P-CH 12V 1.52A 6TSOP

MOSFET P-CH 12V 1.52A 6TSOP

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BSH207,135 096612-BSH207,135 BSH207,135
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH207,135 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type SC-74-6 SOT3; 6-TSOP 8.8 nC @ 4.5 V
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR Bulk; Bulk
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