NXP Semiconductors 12V 750MA MOSFET Transistor BSH205,215

MOSFET P-CH 12V 750MA TO236AB Product overview: BSH205,215 from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 750MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 750MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSH205,215 can be used for catalog matching and distributor lookup.

P-Channel 12V 750mA (Ta) 417mW (Ta) Surface Mount SOT-23 (TO-236AB)

Win Source Part Number: 1049676-BSH205,215
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 680mV @ 1mA (Typ)
Power Dissipation (Max): 417mW (Ta)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 9.6 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: NXP USA Inc.
Other Names: 568-8028-2,2156-BSH205215,568-8028-1,934054721215,BSH205 T/R-ND,BSH205,215-ND,568-8028-6,NEXNXPBSH205,215,954-BSH205215,BSH205 T/R
Base Product Number: BSH205
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V