NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH105,215 BSH105,215

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 096963-BSH105,215 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 417mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.05A (Ta) Gate-Source Threshold Voltage: 570mV @ 1mA Max Gate Charge: 3.9nC @ 4.5V Max Input Capacitance: 152pF @ 16V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 200 mOhm @ 600mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 096963-BSH105,215 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 417mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.05A (Ta) Gate-Source Threshold Voltage: 570mV @ 1mA Max Gate Charge: 3.9nC @ 4.5V Max Input Capacitance: 152pF @ 16V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 200 mOhm @ 600mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH105,215 - 096963-BSH105,215 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH105,215
096963-BSH105,215
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH105,215 096963-BSH105,215
Manufacturer: Nexperia USA Inc. Win Source Part Number: 096963-BSH105,215 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 417mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.05A (Ta) Gate-Source Threshold Voltage: 570mV @ 1mA Max Gate Charge: 3.9nC @ 4.5V Max Input Capacitance: 152pF @ 16V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 200 mOhm @ 600mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 096963-BSH105,215
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 417mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.05A (Ta)
Gate-Source Threshold Voltage: 570mV @ 1mA
Max Gate Charge: 3.9nC @ 4.5V
Max Input Capacitance: 152pF @ 16V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 200 mOhm @ 600mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 096963-BSH105,215
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH105,215
Polarity N-Channel; N-Channel
V(BR)DSS 20 volts
PD 417 milliwatts
Unlock Full Specs
to access all available technical data