NXP Semiconductors 2.8V 0.04A 136mW Bipolar Transistor BFU725F

Trans RF BJT NPN 2.8V 0.04A 136mW 4-Pin(3+Tab) DFP / TRANSISTOR NPN 40MA SOT343 Product overview: BFU725F from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.8V, 0.04A, 136mW. Search-friendly keywords include transistor, BJT, switching, amplification, 2.8V, 0.04A, 136mW, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFU725F can be used for catalog matching and distributor lookup.

Manufacturer: NXP
Win Source Part Number: 235169-BFU725F
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 10dB to 24dB
Frequency - Transition: 55GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.42dB to 1.1dB @ 1.5GHz to 12GHz
Family Name: BFU725F
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 4-SO
Maximum Current Collector: 40mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 2.8V
Typical Gain (hFE) (Min): 160 @ 10mA, 2V
Maximum Power Dissipation: 136mW
Alternative Parts (Cross-Reference): BFU725F,115; BFU725F/N1,115; BFU725F/N1;
Introduction Date: December 06, 2007
ECCN: EAR99
Country of Origin: China, Hong Kong, Malaysia
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance