NXP Semiconductors TRANSISTORS - RF Transistors (BJT) - BFU725F BFU725F

Description
Manufacturer: NXP Win Source Part Number: 235169-BFU725F Packaging: Reel - TR Mounting: SMD (SMT) Gain: 10dB to 24dB Frequency - Transition: 55GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.42dB to 1.1dB @ 1.5GHz to 12GHz Family Name: BFU725F Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 4-SO Maximum Current Collector: 40mA VCEO Maximum Collector-Emitter Breakdown Voltage: 2.8V Typical Gain (hFE) (Min): 160 @ 10mA, 2V Maximum Power Dissipation: 136mW Alternative Parts (Cross-Reference): BFU725F,115; BFU725F/N1,115; BFU725F/N1; Introduction Date: December 06, 2007 ECCN: EAR99 Country of Origin: China, Hong Kong, Malaysia Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: NXP Win Source Part Number: 235169-BFU725F Packaging: Reel - TR Mounting: SMD (SMT) Gain: 10dB to 24dB Frequency - Transition: 55GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.42dB to 1.1dB @ 1.5GHz to 12GHz Family Name: BFU725F Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 4-SO Maximum Current Collector: 40mA VCEO Maximum Collector-Emitter Breakdown Voltage: 2.8V Typical Gain (hFE) (Min): 160 @ 10mA, 2V Maximum Power Dissipation: 136mW Alternative Parts (Cross-Reference): BFU725F,115; BFU725F/N1,115; BFU725F/N1; Introduction Date: December 06, 2007 ECCN: EAR99 Country of Origin: China, Hong Kong, Malaysia Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - BFU725F - 235169-BFU725F - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFU725F
235169-BFU725F
TRANSISTORS - RF Transistors (BJT) - BFU725F 235169-BFU725F
Manufacturer: NXP Win Source Part Number: 235169-BFU725F Packaging: Reel - TR Mounting: SMD (SMT) Gain: 10dB to 24dB Frequency - Transition: 55GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.42dB to 1.1dB @ 1.5GHz to 12GHz Family Name: BFU725F Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 4-SO Maximum Current Collector: 40mA VCEO Maximum Collector-Emitter Breakdown Voltage: 2.8V Typical Gain (hFE) (Min): 160 @ 10mA, 2V Maximum Power Dissipation: 136mW Alternative Parts (Cross-Reference): BFU725F,115; BFU725F/N1,115; BFU725F/N1; Introduction Date: December 06, 2007 ECCN: EAR99 Country of Origin: China, Hong Kong, Malaysia Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: NXP
Win Source Part Number: 235169-BFU725F
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 10dB to 24dB
Frequency - Transition: 55GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.42dB to 1.1dB @ 1.5GHz to 12GHz
Family Name: BFU725F
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 4-SO
Maximum Current Collector: 40mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 2.8V
Typical Gain (hFE) (Min): 160 @ 10mA, 2V
Maximum Power Dissipation: 136mW
Alternative Parts (Cross-Reference): BFU725F,115; BFU725F/N1,115; BFU725F/N1;
Introduction Date: December 06, 2007
ECCN: EAR99
Country of Origin: China, Hong Kong, Malaysia
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 235169-BFU725F
Product Name TRANSISTORS - RF Transistors (BJT) - BFU725F
Polarity NPN; NPN
Package Type SOT3; 4-SO
Packing Method Tape Reel; Reel - TR
IC(max) 40 milliamps
VCEO 2.8 volts
Unlock Full Specs
to access all available technical data