NPN silicon RF transistor for high-speed, low-noise applications up to 2 GHz in a plastic, 4-pin dual-emitter SOT143R package. It has a collector-emitter voltage rating of 12 V, collector current of 50 mA, and total power dissipation of 450 mW at a solder point temperature of 87 °C. The transistor features a minimum noise figure of 0.7 dB at 900 MHz and a transition frequency of 11 GHz. It is AEC-Q101 qualified for automotive applications.
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NPN silicon RF transistor for high-speed, low-noise applications up to 2 GHz in a plastic, 4-pin dual-emitter SOT143R package. It has a collector-emitter voltage rating of 12 V, collector current of 50 mA, and total power dissipation of 450 mW at a solder point temperature of 87 °C. The transistor features a minimum noise figure of 0.7 dB at 900 MHz and a transition frequency of 11 GHz. It is AEC-Q101 qualified for automotive applications.
