NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package, suitable for broadband amplifiers and low noise amplifiers up to 2 GHz. Features a minimum noise figure of 0.7 dB at 900 MHz, maximum stable gain of 20 dB at 900 MHz, and a transition frequency of 10.5 GHz. Rated for a collector-emitter voltage of up to 12 V and collector current of up to 30 mA, with a total power dissipation of 450 mW at a solder point temperature of 87°C. AEC-Q101 qualified.
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BFU520X235 |
| Product Name | Bipolar RF Transistors |
