NXP Semiconductors JFETs (Junction Field Effect) - BFR30,215 BFR30,215

Manufacturer: NXP
Win Source Part Number: 1023253-BFR30,215
Packaging: Reel - TR
Mounting: SMD (SMT)
Polarity: N-Channel
Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 10V
Current Drain (Id) - Max: 10mA
Voltage - Cutoff (VGS off) @ Id: 5V @ 0.5nA
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23 (TO-236AB)
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 25V
Max Input Capacitance: 4pF @ 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

JFET N-Channel 10mA 250mW Surface Mount SOT-23 (TO-236AB)

JFET N-CH 10MA SOT23 Product overview: BFR30,215 from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10MA, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 10MA, SOT23, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-BFR30,215 can be used for catalog matching and distributor lookup.