NPN silicon RF transistor for UHF and microwave amplification in thin and thick-film circuits, housed in a SOT89 surface-mount package measuring 4.6 mm by 2.6 mm. It has a maximum collector-emitter voltage of 15 V, a continuous collector current of 100 mA, and a total power dissipation of 1 W. The transition frequency is 5.5 GHz at 50 mA collector current and 10 V collector-emitter bias. It features a maximum unilateral power gain of 11.5 dB at 500 MHz and a noise figure of 3.3 dB at 500 MHz. The device meets RoHS requirements and is qualified under IEC 60134 absolute maximum ratings.
Bipolar - RF Transistor, NPN, 15 V, 5.5 GHz, 1 W, 100 mA, 80 RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 96K6955 |
| Product Name | Bipolar Rf Transistor, Npn, 15 V, 5.5 Ghz, 1 W, 100 Ma, 80 Rohs Compliant Nxp |
| Polarity | NPN |
