NXP Semiconductors 10V 30MA Bipolar Transistor BFG424W

Description
TRANS NPN 10V 30MA SOT343R Product overview: BFG424W from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V, 30MA. Search-friendly keywords include transistor, BJT, switching, amplification, 10V, 30MA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG424W can be used for catalog matching and distributor lookup.
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Description
TRANS NPN 10V 30MA SOT343R Product overview: BFG424W from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V, 30MA. Search-friendly keywords include transistor, BJT, switching, amplification, 10V, 30MA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG424W can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
10V 30MA Bipolar Transistor
283-BFG424W
10V 30MA Bipolar Transistor 283-BFG424W
TRANS NPN 10V 30MA SOT343R Product overview: BFG424W from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V, 30MA. Search-friendly keywords include transistor, BJT, switching, amplification, 10V, 30MA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG424W can be used for catalog matching and distributor lookup.

TRANS NPN 10V 30MA SOT343R Product overview: BFG424W from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V, 30MA. Search-friendly keywords include transistor, BJT, switching, amplification, 10V, 30MA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG424W can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - BFG424W - 201155-BFG424W - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFG424W
201155-BFG424W
TRANSISTORS - RF Transistors (BJT) - BFG424W 201155-BFG424W
Manufacturer: NXP Win Source Part Number: 201155-BFG424W Packaging: Reel - TR Mounting: SMD (SMT) Gain: 22dB Frequency - Transition: 25GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.8dB to 1.2dB @ 900MHz to 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: CMPAK-4 Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 4.5V Typical Gain (hFE) (Min): 50 @ 25mA, 2V Maximum Power Dissipation: 135mW Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: NXP
Win Source Part Number: 201155-BFG424W
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 22dB
Frequency - Transition: 25GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.8dB to 1.2dB @ 900MHz to 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: CMPAK-4
Maximum Current Collector: 30mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 4.5V
Typical Gain (hFE) (Min): 50 @ 25mA, 2V
Maximum Power Dissipation: 135mW
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 283-BFG424W 201155-BFG424W
Product Name 10V 30MA Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - BFG424W
Polarity NPN NPN; NPN
Package Type Reel - TR SOT3; CMPAK-4
Packing Method Reel - TR
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