NXP Semiconductors TRANSISTORS - RF Transistors (BJT) - BFG424W BFG424W

Manufacturer: NXP
Win Source Part Number: 201155-BFG424W
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 22dB
Frequency - Transition: 25GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.8dB to 1.2dB @ 900MHz to 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: CMPAK-4
Maximum Current Collector: 30mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 4.5V
Typical Gain (hFE) (Min): 50 @ 25mA, 2V
Maximum Power Dissipation: 135mW
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

TRANS NPN 10V 30MA SOT343R Product overview: BFG424W from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V, 30MA. Search-friendly keywords include transistor, BJT, switching, amplification, 10V, 30MA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG424W can be used for catalog matching and distributor lookup.