NXP Semiconductors 18V 4GHZ Bipolar Transistor BFG35,115

Description
RF TRANS NPN 18V 4GHZ SOT223 Product overview: BFG35,115 from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 18V, 4GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 18V, 4GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG35,115 can be used for catalog matching and distributor lookup.
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Description
RF TRANS NPN 18V 4GHZ SOT223 Product overview: BFG35,115 from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 18V, 4GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 18V, 4GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG35,115 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
18V 4GHZ Bipolar Transistor
283-BFG35,115
18V 4GHZ Bipolar Transistor 283-BFG35,115
RF TRANS NPN 18V 4GHZ SOT223 Product overview: BFG35,115 from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 18V, 4GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 18V, 4GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG35,115 can be used for catalog matching and distributor lookup.

RF TRANS NPN 18V 4GHZ SOT223 Product overview: BFG35,115 from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 18V, 4GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 18V, 4GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFG35,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - BFG35,115 - 143297-BFG35,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFG35,115
143297-BFG35,115
TRANSISTORS - RF Transistors (BJT) - BFG35,115 143297-BFG35,115
Manufacturer: NXP Win Source Part Number: 143297-BFG35,115 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 4GHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: SOT-223 Maximum Current Collector: 150mA VCEO Maximum Collector-Emitter Breakdown Voltage: 18V Typical Gain (hFE) (Min): 25 @ 100mA, 10V Maximum Power Dissipation: 1W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: NXP
Win Source Part Number: 143297-BFG35,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 4GHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: SOT-223
Maximum Current Collector: 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 18V
Typical Gain (hFE) (Min): 25 @ 100mA, 10V
Maximum Power Dissipation: 1W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Bipolar RF Transistors - 568-6187-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
568-6187-2-ND
Bipolar RF Transistors 568-6187-2-ND
RF Transistor NPN 18V 150mA 4GHz 1W Surface Mount SC-73

RF Transistor NPN 18V 150mA 4GHz 1W Surface Mount SC-73

Buy Now Datasheet
Rf Wideband Transistor, Npn, 18V, 4Ghz, 3-Sot-223, Full Reel; Transistor Polarity Nxp - 70R2512 - Newark, An Avnet Company
Chicago, IL, United States
Rf Wideband Transistor, Npn, 18V, 4Ghz, 3-Sot-223, Full Reel; Transistor Polarity Nxp
70R2512
Rf Wideband Transistor, Npn, 18V, 4Ghz, 3-Sot-223, Full Reel; Transistor Polarity Nxp 70R2512
RF WIDEBAND TRANSISTOR, NPN, 18V, 4GHZ, 3-SOT-223, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:18V; Transition Frequency:4GHz; Power Dissipation:1W; Continuous Collector Current:150mA; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes

RF WIDEBAND TRANSISTOR, NPN, 18V, 4GHZ, 3-SOT-223, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:18V; Transition Frequency:4GHz; Power Dissipation:1W; Continuous Collector Current:150mA; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes

Supplier's Site
Bipolar RF Transistors - BFG35,115 - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
BFG35,115
Bipolar RF Transistors BFG35,115
RF TRANS NPN 18V 4GHZ SOT223

RF TRANS NPN 18V 4GHZ SOT223

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BFG35,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BFG35,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BFG35,115
RF TRANS NPN 18V 4GHZ SOT223

RF TRANS NPN 18V 4GHZ SOT223

Supplier's Site
RF WIDEBAND TRANSISTOR, NPN, 18V, 4GHZ, 3-SOT-223 - More Details - 568-BFG35,115 - Utmel Electronic Limited
Hong Kong, China
RF WIDEBAND TRANSISTOR, NPN, 18V, 4GHZ, 3-SOT-223 - More Details
568-BFG35,115
RF WIDEBAND TRANSISTOR, NPN, 18V, 4GHZ, 3-SOT-223 - More Details 568-BFG35,115
RF WIDEBAND TRANSISTOR, NPN, 18V, 4GHZ, 3-SOT-223 - More Details

RF WIDEBAND TRANSISTOR, NPN, 18V, 4GHZ, 3-SOT-223 - More Details

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Newark, An Avnet Company ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Bipolar RF Transistors Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors RF Transistors
Product Number 283-BFG35,115 143297-BFG35,115 568-6187-2-ND 70R2512 BFG35,115 BFG35,115 568-BFG35,115
Product Name 18V 4GHZ Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - BFG35,115 Bipolar RF Transistors Rf Wideband Transistor, Npn, 18V, 4Ghz, 3-Sot-223, Full Reel; Transistor Polarity Nxp Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) RF WIDEBAND TRANSISTOR, NPN, 18V, 4GHZ, 3-SOT-223 - More Details
Package Type Tape & Reel (TR) SOT3; SOT-223 TO-261-4, TO-261AA TO-3; SOT223 TO-261-4, TO-261AA
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR Tape Reel; Tape & Reel (TR)
VCEO 18 volts 18 volts 18 volts
TJ 175 C (347 F) 175 C (347 F) 175 C (347 F)
Polarity NPN; NPN NPN NPN NPN; NPN NPN; NPN
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