NXP Semiconductors BCW30,235

Description
Small Signal Bipolar Transistor, 0.1A, 32V, PNP, TO-236AB
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Description
Small Signal Bipolar Transistor, 0.1A, 32V, PNP, TO-236AB
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Datasheet
Datasheet Summary
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PNP general purpose transistor in a SOT23 surface-mounted package, rated for a maximum collector current of 100 mA and collector-emitter voltage of 32 V. The device has a DC current gain (hFE) ranging from 215 to 500 at I_C = -2 mA and V_CE = -5 V, with a collector-emitter saturation voltage of up to 150 mV under I_C = -50 mA and I_B = -2.5 mA. It meets IEC 60134 for limiting values and is rated for a junction temperature up to 150 °C. The package is compliant with SOT23/TO-236AB dimensions.

Datasheet Summary
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PNP general purpose transistor in a SOT23 surface-mounted package, rated for a maximum collector current of 100 mA and collector-emitter voltage of 32 V. The device has a DC current gain (hFE) ranging from 215 to 500 at I_C = -2 mA and V_CE = -5 V, with a collector-emitter saturation voltage of up to 150 mV under I_C = -50 mA and I_B = -2.5 mA. It meets IEC 60134 for limiting values and is rated for a junction temperature up to 150 °C. The package is compliant with SOT23/TO-236AB dimensions.

Suppliers

Company
Product
Description
Supplier Links
 - BCW30,235 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A, 32V, PNP, TO-236AB

Small Signal Bipolar Transistor, 0.1A, 32V, PNP, TO-236AB

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number BCW30,235
Polarity PNP
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