NXP Semiconductors TRANSISTORS - Transistors (BJT) - Arrays - BCM847DS,115 BCM847DS,115

Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon
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Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - BCM847DS,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - BCM847DS,115 - 084268-BCM847DS,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - BCM847DS,115
084268-BCM847DS,115
TRANSISTORS - Transistors (BJT) - Arrays - BCM847DS,115 084268-BCM847DS,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 084268-BCM847DS,115 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN (Dual) Matched Pair Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 6-TSOP Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 400mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 200 @ 2mA, 5V Maximum Power Dissipation: 380mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 084268-BCM847DS,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 NPN (Dual) Matched Pair
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-TSOP
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 400mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2mA, 5V
Maximum Power Dissipation: 380mW
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Rochester Electronics Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number BCM847DS,115 084268-BCM847DS,115
Product Name TRANSISTORS - Transistors (BJT) - Arrays - BCM847DS,115
Polarity NPN NPN; 2 NPN (Dual) Matched Pair
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