NXP Semiconductors TRANSISTORS - Transistors (BJT) - Single - BC859B,215 BC859B,215

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 101549-BC859B,215
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 650mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 220 @ 2mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Audio, Power Management

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

NEXPERIA BC859B - SMALL SIGNAL B Product overview: BC859B,215 from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BC859B,215 can be used for catalog matching and distributor lookup.