NXP Semiconductors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single BC857B/DG/B3215

Description
Win Source Part Number: 959970-BC857B/DG/B32 15 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): BC857B/DG/B3215BC857 B/DG/B3,215; BC857BDGB3215; ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.21.0075 Mfr: NXP USA Inc. Other Names: NEXNXPBC857B/DG/B321 5,2156-BC857B/DG/B32 15 RoHS Status: Not applicable
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 959970-BC857B/DG/B3215 - Win Source Electronics
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Description
Win Source Part Number: 959970-BC857B/DG/B32 15 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): BC857B/DG/B3215BC857 B/DG/B3,215; BC857BDGB3215; ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.21.0075 Mfr: NXP USA Inc. Other Names: NEXNXPBC857B/DG/B321 5,2156-BC857B/DG/B32 15 RoHS Status: Not applicable
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 959970-BC857B/DG/B3215 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
959970-BC857B/DG/B3215
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 959970-BC857B/DG/B3215
Win Source Part Number: 959970-BC857B/DG/B32 15 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): BC857B/DG/B3215BC857 B/DG/B3,215; BC857BDGB3215; ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.21.0075 Mfr: NXP USA Inc. Other Names: NEXNXPBC857B/DG/B321 5,2156-BC857B/DG/B32 15 RoHS Status: Not applicable

Win Source Part Number: 959970-BC857B/DG/B3215
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Bulk
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): BC857B/DG/B3215BC857B/DG/B3,215; BC857BDGB3215;
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: Vendor Undefined
HTSUS: 8541.21.0075
Mfr: NXP USA Inc.
Other Names: NEXNXPBC857B/DG/B3215,2156-BC857B/DG/B3215
RoHS Status: Not applicable

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 959970-BC857B/DG/B3215
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
Polarity PNP
Package Type SOT3
IC(max) 100 milliamps
Power Gain 125 dB
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