PNP silicon transistor in SOT23 surface-mount package for general purpose switching and amplification, with a collector-emitter voltage rating of -45 V, collector current of -100 mA, and total power dissipation of 250 mW. The device has a DC current gain (hFE) range of 220 to 475, collector-emitter saturation voltage of -250 mV to -650 mV at -100 mA collector current, and transition frequency of 100 MHz. Operates from -65 °C to +150 °C ambient temperature. Meets IEC 60134 absolute maximum ratings and is packaged in TO-236AB (SOT23).
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC857B,235 |
| Polarity | PNP |
