NXP Semiconductors BC856B/DG/B3,235

Description
Small Signal Bipolar Transistor, 0.1A, 65V, PNP, TO-236AB
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Description
Small Signal Bipolar Transistor, 0.1A, 65V, PNP, TO-236AB
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Datasheet
Datasheet Summary
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PNP general purpose transistor in a SOT23 surface-mounted package, rated for a maximum collector-base voltage of 30 V, collector-emitter voltage of 30 V, and collector current of 100 mA, with a total power dissipation of 250 mW at 25 °C. Thermal resistance from junction to ambient is 500 K/W. Complements the NPN BC848 series.

Datasheet Summary
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PNP general purpose transistor in a SOT23 surface-mounted package, rated for a maximum collector-base voltage of 30 V, collector-emitter voltage of 30 V, and collector current of 100 mA, with a total power dissipation of 250 mW at 25 °C. Thermal resistance from junction to ambient is 500 K/W. Complements the NPN BC848 series.

Suppliers

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Product
Description
Supplier Links
 - BC856B/DG/B3,235 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A, 65V, PNP, TO-236AB

Small Signal Bipolar Transistor, 0.1A, 65V, PNP, TO-236AB

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number BC856B/DG/B3,235
Polarity PNP
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