PNP silicon transistor for general purpose switching and amplification in a SOT23 surface-mounted package. It has a maximum collector current of 100 mA, collector-emitter voltage of 65 V, and collector-base voltage of 80 V. The total power dissipation is 250 mW at 25 °C ambient temperature, with a thermal resistance from junction to ambient of 500 K/W. The DC current gain (hFE) ranges from 125 to 250 at a collector current of 2 mA and collector-emitter voltage of 5 V. The transistor operates within a junction temperature range of -65 °C to 150 °C and meets the IEC 60134 absolute maximum ratings standard.
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC856A,215 |
| Polarity | PNP |
