NXP Semiconductors BC850C,235

NPN silicon general purpose transistor in a SOT23 surface-mounted package for switching and amplification, with a maximum collector current of 100 mA and collector-emitter voltage of 45 V. Total power dissipation is 250 mW at 25 °C, and junction temperature is rated to 150 °C, with a thermal resistance of 500 K/W. DC current gain (hFE) ranges from 420 to 800 at 2 mA collector current and 5 V collector-emitter voltage. Collector-emitter saturation voltage is up to 600 mV at 100 mA collector current and 5 mA base current. Transition frequency is 100 MHz at 10 mA collector current and 5 V collector-emitter voltage. Noise figure is 4 dB at 200 μA collector current and 2 kΩ source resistance. Complies with IEC 60134.