NPN silicon transistor for general purpose switching and amplification in a SOT23 surface-mounted package, measuring 2.8 to 3.0 mm by 1.2 to 1.4 mm. It has a maximum collector-emitter voltage of 45 V, a maximum collector current of 100 mA, and a total power dissipation of 250 mW at 25 °C. The transistor has a DC current gain (hFE) ranging from 420 to 800 at I_C = 2 mA and V_CE = 5 V. Thermal resistance from junction to ambient is 500 K/W when mounted on an FR4 PCB. It meets the SOT23 package standard and is rated for a junction temperature up to 150 °C.
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC850C,215 |
| Polarity | NPN |
