NPN silicon general purpose transistor in a SOT23 surface-mounted package, rated for a collector current of 100 mA and a collector-emitter voltage of 45 V, with a total power dissipation of 250 mW at 25 °C and a junction temperature up to 150 °C. It has a DC current gain range of 200 to 450 at 2 mA collector current and 5 V collector-emitter voltage. Thermal resistance from junction to ambient is 500 K/W when mounted on an FR4 PCB. Complies with IEC 60134 for limiting values and is specified for operation from -65 °C to 150 °C ambient temperature.
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC850B,215 |
| Polarity | NPN |
