NXP Semiconductors BC847CMB,315

Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Request a Quote
Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

NPN general-purpose transistor in a leadless ultra small SOT883B surface-mount package measuring 1.0 × 0.6 × 0.37 mm, rated for 45 V collector-emitter voltage and 100 mA collector current, with a DC current gain ranging from 420 to 800 at VCE = 5 V and IC = 2 mA, and a total power dissipation of 250 mW at 25°C ambient temperature, qualified to AEC-Q101 for automotive applications.

Datasheet Summary
Powered by GS/AI

NPN general-purpose transistor in a leadless ultra small SOT883B surface-mount package measuring 1.0 × 0.6 × 0.37 mm, rated for 45 V collector-emitter voltage and 100 mA collector current, with a DC current gain ranging from 420 to 800 at VCE = 5 V and IC = 2 mA, and a total power dissipation of 250 mW at 25°C ambient temperature, qualified to AEC-Q101 for automotive applications.

Suppliers

Company
Product
Description
Supplier Links
 - BC847CMB,315 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number BC847CMB,315
Polarity NPN
Unlock Full Specs
to access all available technical data