NXP Semiconductors BC847,215

Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
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Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
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Datasheet
Datasheet Summary
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NPN silicon transistor for AF input stages and driver applications, available in SOT23, SOT323, TSFP-3, and TSLP-3-1 packages, with a collector-emitter voltage rating of 45 V, collector current of 100 mA, and total power dissipation of 250 mW for the BC847F variant. Complies with AEC-Q101 and is RoHS compliant.

Datasheet Summary
Powered by GS/AI

NPN silicon transistor for AF input stages and driver applications, available in SOT23, SOT323, TSFP-3, and TSLP-3-1 packages, with a collector-emitter voltage rating of 45 V, collector current of 100 mA, and total power dissipation of 250 mW for the BC847F variant. Complies with AEC-Q101 and is RoHS compliant.

Suppliers

Company
Product
Description
Supplier Links
 - BC847,215 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number BC847,215
Polarity NPN
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