NPN general-purpose transistor for switching and amplification, housed in a SOT23 (TO-236AB) surface-mount package, rated for a collector-emitter voltage of 50 V and a collector current of 200 mA, with a DC current gain (hFE) group R of 210 to 340 and group S of 290 to 460, AEC-Q101 qualified, and a total power dissipation of 250 mW at 25°C ambient temperature.
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2PD601BRL,215 |
| Polarity | NPN |
