NXP Semiconductors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 2PC4617QMB,315

Description
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN
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Description
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 2PC4617QMB,315 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 957998-2PC4617QMB,315 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
957998-2PC4617QMB,315
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 957998-2PC4617QMB,315
Win Source Part Number: 957998-2PC4617QMB,31 5 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 100MHz Package / Case: SC-101, SOT-883 Supplier Device Package: DFN1006B-3 Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): MUN2213T1; 2DC4617QLP-7; 2DC4617QLP-7B; UNR211V00L; UNR211000L; UNR211N00L2PC4617QMB 315; 2PC4617QMB315; ECCN: EAR99 Fake Threat In the Open Market: 80 pct. HTSUS: 8541.21.0075 Mfr: NXP USA Inc. Other Names: NEXNXP2PC4617QMB,315 ,2156-2PC4617QMB,315

Win Source Part Number: 957998-2PC4617QMB,315
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006B-3
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): MUN2213T1; 2DC4617QLP-7; 2DC4617QLP-7B; UNR211V00L; UNR211000L; UNR211N00L2PC4617QMB 315; 2PC4617QMB315;
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
HTSUS: 8541.21.0075
Mfr: NXP USA Inc.
Other Names: NEXNXP2PC4617QMB,315,2156-2PC4617QMB,315

Buy Now Datasheet
Bipolar Transistor 276-2PC4617QMB,315
NOW NEXPERIA 2PC4617QMB - SMALL Product overview: 2PC4617QMB,315 from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2PC4617QMB,315 can be used for catalog matching and distributor lookup.

NOW NEXPERIA 2PC4617QMB - SMALL Product overview: 2PC4617QMB,315 from NXP Semiconductors is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2PC4617QMB,315 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2PC4617QMB,315 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2PC4617QMB,315
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2PC4617QMB,315
NOW NEXPERIA 2PC4617QMB - SMALL

NOW NEXPERIA 2PC4617QMB - SMALL

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2PC4617QMB,315 957998-2PC4617QMB,315 276-2PC4617QMB,315 2PC4617QMB,315
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type SOT883B SOT3 Bulk
Packing Method Tape Reel; Tape & Reel Bulk Bulk; Bulk
IC(max) 100 milliamps 100 milliamps
Power Gain 120 dB
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