Manufacturer: Nexperia USA Inc.
Win Source Part Number: 104519-2N7002BKV,115
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-666
Maximum Power Dissipation: 350mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 340mA
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 0.6nC @ 4.5V
Max Input Capacitance: 50pF @ 10V
Maximum Rds On at Id,Vgs: 1.6 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Small Signal Field-Effect Transistor, 0.34A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 2N-CH 60V 0.34A SOT666
| Win Source Electronics | Rochester Electronics | DigiKey | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF MOSFET Transistors | Transistors |
| Product Number | 104519-2N7002BKV,115 | 2N7002BKV,115 | 568-2N7002BKV,115TR-ND |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002BKV,115 | FET, MOSFET Arrays | |
| Polarity | N-Channel | N-Channel | |
| V(BR)DSS | 60 volts | ||
| PD | 350 milliwatts |