NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002BKV,115 2N7002BKV,115

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 104519-2N7002BKV,115 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-666 Maximum Power Dissipation: 350mW Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 340mA Gate-Source Threshold Voltage: 2.1V @ 250μA Max Gate Charge: 0.6nC @ 4.5V Max Input Capacitance: 50pF @ 10V Maximum Rds On at Id,Vgs: 1.6 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 104519-2N7002BKV,115 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-666 Maximum Power Dissipation: 350mW Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 340mA Gate-Source Threshold Voltage: 2.1V @ 250μA Max Gate Charge: 0.6nC @ 4.5V Max Input Capacitance: 50pF @ 10V Maximum Rds On at Id,Vgs: 1.6 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002BKV,115 - 104519-2N7002BKV,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002BKV,115
104519-2N7002BKV,115
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002BKV,115 104519-2N7002BKV,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 104519-2N7002BKV,115 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-666 Maximum Power Dissipation: 350mW Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 340mA Gate-Source Threshold Voltage: 2.1V @ 250μA Max Gate Charge: 0.6nC @ 4.5V Max Input Capacitance: 50pF @ 10V Maximum Rds On at Id,Vgs: 1.6 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 104519-2N7002BKV,115
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-666
Maximum Power Dissipation: 350mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 340mA
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 0.6nC @ 4.5V
Max Input Capacitance: 50pF @ 10V
Maximum Rds On at Id,Vgs: 1.6 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
 - 2N7002BKV,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor, 0.34A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Small Signal Field-Effect Transistor, 0.34A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
FET, MOSFET Arrays - 568-2N7002BKV,115TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
568-2N7002BKV,115TR-ND
FET, MOSFET Arrays 568-2N7002BKV,115TR-ND
MOSFET 2N-CH 60V 0.34A SOT666

MOSFET 2N-CH 60V 0.34A SOT666

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Technical Specifications

  Win Source Electronics Rochester Electronics DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF MOSFET Transistors Transistors
Product Number 104519-2N7002BKV,115 2N7002BKV,115 568-2N7002BKV,115TR-ND
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002BKV,115 FET, MOSFET Arrays
Polarity N-Channel N-Channel
V(BR)DSS 60 volts
PD 350 milliwatts
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