NXP Semiconductors TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002,215 2N7002,215

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 005716-2N7002,215 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 830mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 300mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Input Capacitance: 50pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Application Field: Used in Industrial
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 005716-2N7002,215 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 830mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 300mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Input Capacitance: 50pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Application Field: Used in Industrial
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002,215 - 005716-2N7002,215 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002,215
005716-2N7002,215
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002,215 005716-2N7002,215
Manufacturer: Nexperia USA Inc. Win Source Part Number: 005716-2N7002,215 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 830mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 300mA (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Input Capacitance: 50pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Application Field: Used in Industrial

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 005716-2N7002,215
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 830mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 300mA (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Input Capacitance: 50pF @ 10V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 005716-2N7002,215
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002,215
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 830 milliwatts
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