The MRF587 is an NPN silicon high-frequency transistor designed for high-gain, low-noise, ultra-linear amplifiers in CATV, MATV, and instrumentation applications. It features a noise figure of 3.0 dB at 500 MHz with a collector current of 90 mA, a maximum power gain of 16.5 dB at 500 MHz, and a transition frequency of 5.5 GHz. The device has third-order intermodulation distortion of -70 dB and a second-order intercept point of 125 dBμV. It uses an ion-implanted process with an all-gold metal system and nichrome emitter ballast resistors. The transistor is packaged in a CASE 244A-01, STYLE 1 package.
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| Richardson RFPD | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | MRF587 |
| Product Name | RF Small Signal Transistor Bipolar/HBT |
| Power Gain | 13 dB |
