Richardson RFPD Gate Driver Evaluation Product EVAL-ADUM4221EBZ

Description
The EVAL-ADuM4221EBZ supports the ADuM4221, 4 A isolated, half bridge, dual channel gate driver with 150kV/usec CMTI, adjustable dead time, separate inputs and various UVLO options. The device employs the Analog Devices, Inc., iCoupler technology to provide independent and isolated high-side and low-side outputs. The ADuM4221 provides 5700 V rms isolation in the increased creepage wide body, 16-lead SOIC package. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics superior to the alternatives, such as the combination of pulse transformers and gate drivers. The ADuM4221 isolators provide two independent isolated channels. The isolators operate with a logic input voltage ranging from 2.5 V to 6.5 V, providing compatibility with lower voltage systems. In comparison to gate drivers employing high voltage level translation methodologies, the ADuM4221 offers the benefit of true, galvanic isolation between the input and each output. Each output can continuously operate up to TBD VPEAK relative to the input, thereby supporting low-side switching to negative voltages. The differential voltage between the high-side and low-side may be as high as TBD VPEAK. A single resistor between DT and GND1 provides a wide range of dead time adjustment. As a result, the ADuM4221 provides reliable control over the switching characteristics of the insulated gate bipolar transistor (IGBT)/metal-oxide semiconductor field effect transistor (MOSFET) configurations over a wide range of positive or negative switching voltages.
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Description
The EVAL-ADuM4221EBZ supports the ADuM4221, 4 A isolated, half bridge, dual channel gate driver with 150kV/usec CMTI, adjustable dead time, separate inputs and various UVLO options. The device employs the Analog Devices, Inc., iCoupler technology to provide independent and isolated high-side and low-side outputs. The ADuM4221 provides 5700 V rms isolation in the increased creepage wide body, 16-lead SOIC package. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics superior to the alternatives, such as the combination of pulse transformers and gate drivers. The ADuM4221 isolators provide two independent isolated channels. The isolators operate with a logic input voltage ranging from 2.5 V to 6.5 V, providing compatibility with lower voltage systems. In comparison to gate drivers employing high voltage level translation methodologies, the ADuM4221 offers the benefit of true, galvanic isolation between the input and each output. Each output can continuously operate up to TBD VPEAK relative to the input, thereby supporting low-side switching to negative voltages. The differential voltage between the high-side and low-side may be as high as TBD VPEAK. A single resistor between DT and GND1 provides a wide range of dead time adjustment. As a result, the ADuM4221 provides reliable control over the switching characteristics of the insulated gate bipolar transistor (IGBT)/metal-oxide semiconductor field effect transistor (MOSFET) configurations over a wide range of positive or negative switching voltages.
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Downers Grove, IL, United States
Gate Driver Evaluation Product
EVAL-ADUM4221EBZ
Gate Driver Evaluation Product EVAL-ADUM4221EBZ
The EVAL-ADuM4221EBZ supports the ADuM4221, 4 A isolated, half bridge, dual channel gate driver with 150kV/usec CMTI, adjustable dead time, separate inputs and various UVLO options. The device employs the Analog Devices, Inc., iCoupler technology to provide independent and isolated high-side and low-side outputs. The ADuM4221 provides 5700 V rms isolation in the increased creepage wide body, 16-lead SOIC package. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics superior to the alternatives, such as the combination of pulse transformers and gate drivers. The ADuM4221 isolators provide two independent isolated channels. The isolators operate with a logic input voltage ranging from 2.5 V to 6.5 V, providing compatibility with lower voltage systems. In comparison to gate drivers employing high voltage level translation methodologies, the ADuM4221 offers the benefit of true, galvanic isolation between the input and each output. Each output can continuously operate up to TBD VPEAK relative to the input, thereby supporting low-side switching to negative voltages. The differential voltage between the high-side and low-side may be as high as TBD VPEAK. A single resistor between DT and GND1 provides a wide range of dead time adjustment. As a result, the ADuM4221 provides reliable control over the switching characteristics of the insulated gate bipolar transistor (IGBT)/metal-oxide semiconductor field effect transistor (MOSFET) configurations over a wide range of positive or negative switching voltages.

The EVAL-ADuM4221EBZ supports the ADuM4221, 4 A isolated, half bridge, dual channel gate driver with 150kV/usec CMTI, adjustable dead time, separate inputs and various UVLO options. The device employs the Analog Devices, Inc., iCoupler technology to provide independent and isolated high-side and low-side outputs. The ADuM4221 provides 5700 V rms isolation in the increased creepage wide body, 16-lead SOIC package. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics superior to the alternatives, such as the combination of pulse transformers and gate drivers.

The ADuM4221 isolators provide two independent isolated channels. The isolators operate with a logic input voltage ranging from 2.5 V to 6.5 V, providing compatibility with lower voltage systems.

In comparison to gate drivers employing high voltage level translation methodologies, the ADuM4221 offers the benefit of true, galvanic isolation between the input and each output. Each output can continuously operate up to TBD VPEAK relative to the input, thereby supporting low-side switching to negative voltages. The differential voltage between the high-side and low-side may be as high as TBD VPEAK.

A single resistor between DT and GND1 provides a wide range of dead time adjustment. As a result, the ADuM4221 provides reliable control over the switching characteristics of the insulated gate bipolar transistor (IGBT)/metal-oxide semiconductor field effect transistor (MOSFET) configurations over a wide range of positive or negative switching voltages.

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Technical Specifications

  Richardson RFPD
Product Category Electronic Development Boards
Product Number EVAL-ADUM4221EBZ
Product Name Gate Driver Evaluation Product
Category Developement Board
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