The BSS84 is a P-channel MOSFET designed for low-power switching applications. It is packaged in a SOT-23 surface-mount case and is rated for a maximum drain-source voltage of 50 V, a continuous drain current of 0.13 A, and a power dissipation of 225 mW. The gate-source voltage is limited to ±20 V. The device has a typical on-resistance of 1.7 Ω at -10 V gate bias and 1.9 Ω at -5 V gate bias, with a threshold voltage range of 0.9 to 2 V. Junction and storage temperatures range from -55 °C to 150 °C. ESD protection up to 2 kV HBM is specified.
P-CHANNEL ENHANCEMENT MODE MOSFE
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSS84 |
| Product Name | Single FETs, MOSFETs |
| Polarity | P-Channel; P-Channel |
| Transistor Technology / Material | MOSFET (Metal Oxide) |
| V(BR)DSS | 50 volts |
| IDSS | 130 milliamps |
