Anbon Semiconductor Co., Ltd. Single FETs, MOSFETs BSS138

Description
N-CHANNEL ENHANCEMENT MODE MOSFE
Description
N-CHANNEL ENHANCEMENT MODE MOSFE
Datasheet
Datasheet Summary
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BSS138 is an N-channel enhancement mode MOSFET in a SOT-23 package, rated for a drain-source voltage of 50 V and a continuous drain current of 200 mA. It has a maximum on-resistance of 3.5 Ω at VGS = 10 V and a power dissipation of 300 mW. The junction temperature ranges from -55⁰C to 150⁰C, with a thermal resistance of 417 ⁰C/W. The gate threshold voltage is between 0.5 V and 1.5 V.

Datasheet Summary
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BSS138 is an N-channel enhancement mode MOSFET in a SOT-23 package, rated for a drain-source voltage of 50 V and a continuous drain current of 200 mA. It has a maximum on-resistance of 3.5 Ω at VGS = 10 V and a power dissipation of 300 mW. The junction temperature ranges from -55⁰C to 150⁰C, with a thermal resistance of 417 ⁰C/W. The gate threshold voltage is between 0.5 V and 1.5 V.

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - BSS138 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BSS138
Single FETs, MOSFETs BSS138
N-CHANNEL ENHANCEMENT MODE MOSFE

N-CHANNEL ENHANCEMENT MODE MOSFE

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSS138
Product Name Single FETs, MOSFETs
Polarity N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 50 volts
IDSS 220 milliamps
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