Anbon Semiconductor Co., Ltd. Single FETs, MOSFETs BSS123

BSS123 is an N-channel enhancement mode MOSFET designed for small signal switching and power MOSFET gate driver applications. It is packaged in SOT-23 with dimensions of 2.80 to 3.00 mm in length, 1.20 to 1.40 mm in width, and 0.90 to 1.15 mm in height. The device has a drain-source breakdown voltage of 100 V, a continuous drain current of 0.2 A, and a maximum power dissipation of 0.35 W. The drain-source on-resistance is 5.0 Ω at 10 V gate voltage and 5.5 Ω at 4.5 V gate voltage. The gate threshold voltage ranges from 1.0 to 2.5 V. Junction temperature operates up to 150 °C, with storage temperatures from -55 to 150 °C. The device meets the AEC-Q200 automotive qualification standard.