Anbon Semiconductor Co., Ltd. Single FETs, MOSFETs AS6004

The AS6004 is a P-channel enhancement mode MOSFET designed for load switching in portable devices and DC/DC converters, housed in an SOT-23-3L package with dimensions of 2.82 to 3.02 mm in length, 2.65 to 2.95 mm in width, and 1.50 to 1.70 mm in height. It has a drain-source breakdown voltage of -60 V, a continuous drain current of -4 A, and drain-source on-resistance of 120 mΩ at -10 V gate voltage and 170 mΩ at -4.5 V gate voltage. The device dissipates up to 1.5 W of power, with a thermal resistance of 83.3 °C/W and a maximum junction temperature of 150 °C. The gate-source voltage rating is ±20 V, and the storage temperature range is -55 °C to +150 °C.