Anbon Semiconductor Co., Ltd. Single FETs, MOSFETs AS2M040120P

AS2M040120P is an N-channel silicon carbide power MOSFET designed for high-efficiency power conversion in renewable energy systems, EV battery chargers, and high-voltage DC/DC converters. It is packaged in a TO-247-3 case with dimensions of 20.80-21.20 mm in length and 15.60-16.00 mm in width. The device has a drain-source breakdown voltage of 1200 V, a maximum on-resistance of 53 mΩ at 18 V gate bias, and continuous drain current ratings of 68 A at 25°C and 49 A at 100°C. It supports a peak pulsed drain current of 100 A and dissipates up to 340 W with a junction-to-case thermal resistance of 0.44°C/W. The junction and storage temperature range is -55°C to +175°C. Switching performance includes a total gate charge of 121 nC, turn-on energy of 1410 µJ, and turn-off energy of 750 µJ under specified conditions.