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Analog Devices, Inc. High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz ADRF5160BCPZ-R7

Description
Product Details The ADRF5160 is a silicon-based, high power, 0.7 GHz to 4.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, such as long-term evolution (LTE) base stations. The ADRF5160 has high power handling of 41 dBm (8 dB PAR LTE, long-term (>10 years) average typical), a low insertion loss of 0.7 dB typical to 2.0 GHz, an input third-order intercept (IP3) of 70 dBm (typical), and a 0.1 dB compression point (P0.1dB) of 47 dBm. On-chip circuitry operates at a single positive supply voltage of 5 V at a typical supply current of 1.1 mA, making the ADRF5160 an ideal alternative to pin diode-based switches. The ADRF5160 comes in a RoHS compliant, compact 32-lead, 5 mm × 5 mm LFCSP. Applications Wireless infrastructure Military and high reliability applications Test equipment Pin diode replacement
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Suppliers

Company
Product
Description
Supplier Links
Norwood, MA, USA
High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz
ADRF5160BCPZ-R7
High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz ADRF5160BCPZ-R7
Product Details The ADRF5160 is a silicon-based, high power, 0.7 GHz to 4.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, such as long-term evolution (LTE) base stations. The ADRF5160 has high power handling of 41 dBm (8 dB PAR LTE, long-term (>10 years) average typical), a low insertion loss of 0.7 dB typical to 2.0 GHz, an input third-order intercept (IP3) of 70 dBm (typical), and a 0.1 dB compression point (P0.1dB) of 47 dBm. On-chip circuitry operates at a single positive supply voltage of 5 V at a typical supply current of 1.1 mA, making the ADRF5160 an ideal alternative to pin diode-based switches. The ADRF5160 comes in a RoHS compliant, compact 32-lead, 5 mm × 5 mm LFCSP. Applications Wireless infrastructure Military and high reliability applications Test equipment Pin diode replacement

Product Details

The ADRF5160 is a silicon-based, high power, 0.7 GHz to 4.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, such as long-term evolution (LTE) base stations. The ADRF5160 has high power handling of 41 dBm (8 dB PAR LTE, long-term (>10 years) average typical), a low insertion loss of 0.7 dB typical to 2.0 GHz, an input third-order intercept (IP3) of 70 dBm (typical), and a 0.1 dB compression point (P0.1dB) of 47 dBm. On-chip circuitry operates at a single positive supply voltage of 5 V at a typical supply current of 1.1 mA, making the ADRF5160 an ideal alternative to pin diode-based switches.

The ADRF5160 comes in a RoHS compliant, compact 32-lead, 5 mm × 5 mm LFCSP.

Applications

  • Wireless infrastructure
  • Military and high reliability applications
  • Test equipment
  • Pin diode replacement
Supplier's Site Datasheet
RF Switches - ADRF5160BCPZ-R7-ND - DigiKey
Thief River Falls, MN, United States
RF Switch IC General Purpose SPDT 50Ohm 32-LFCSP (5x5)

RF Switch IC General Purpose SPDT 50Ohm 32-LFCSP (5x5)

Supplier's Site Datasheet
RF and Microwave Switch - ADRF5160BCPZ-R7 - Richardson RFPD
Geneva, IL, United States
RF and Microwave Switch
ADRF5160BCPZ-R7
RF and Microwave Switch ADRF5160BCPZ-R7
The ADRF5160 is a silicon-based, high power, 0.7 GHz to 4.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, such as long-term evolution (LTE) base stations. The ADRF5160 has high power handling of 41 dBm (8 dB PAR LTE, long-term (>10 years) average typical), a low insertion loss of 0.7 dB typical to 2.0 GHz, an input third-order intercept (IP3) of 70 dBm (typical), and a 0.1 dB compression point (P0.1dB) of 47 dBm. On-chip circuitry operates at a single positive supply voltage of 5 V at a typical supply current of 1.1 mA, making the ADRF5160 an ideal alternative to pin diode-based switches. The ADRF5160 comes in an RoHS compliant, compact, 32-lead, 5 mm × 5 mm LFCSP.

The ADRF5160 is a silicon-based, high power, 0.7 GHz to 4.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, such as long-term evolution (LTE) base stations. The ADRF5160 has high power handling of 41 dBm (8 dB PAR LTE, long-term (>10 years) average typical), a low insertion loss of 0.7 dB typical to 2.0 GHz, an input third-order intercept (IP3) of 70 dBm (typical), and a 0.1 dB compression point (P0.1dB) of 47 dBm. On-chip circuitry operates at a single positive supply voltage of 5 V at a typical supply current of 1.1 mA, making the ADRF5160 an ideal alternative to pin diode-based switches.

The ADRF5160 comes in an RoHS compliant, compact, 32-lead, 5 mm × 5 mm LFCSP.

Supplier's Site Datasheet
RF Switches - ADRF5160BCPZ-R7 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
RF Switches
ADRF5160BCPZ-R7
RF Switches ADRF5160BCPZ-R7
RF Switch IC General Purpose SPDT 50Ohm 32-LFCSP (5x5)

RF Switch IC General Purpose SPDT 50Ohm 32-LFCSP (5x5)

Supplier's Site Datasheet

Technical Specifications

  Analog Devices, Inc. DigiKey Richardson RFPD Quarktwin Technology Ltd.
Product Category RF Switches RF Switches RF Switches RF Switches
Product Number ADRF5160BCPZ-R7 ADRF5160BCPZ-R7-ND ADRF5160BCPZ-R7 ADRF5160BCPZ-R7
Product Name High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz RF Switches RF and Microwave Switch RF Switches
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Frequency Range 700 to 4000 MHz 700 to 4000 MHz 700 to 4000 MHz 700 to 4000 MHz
Insertion Loss 0.8000 dB 0.9000 dB 0.8000 dB 0.9000 dB
Isolation 35 dB 35 dB 51 dB 35 dB
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