NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the emitter connected to the flange, designed for common emitter class A amplifier applications in the 1.4 to 1.8 GHz frequency range under continuous wave conditions. The device has a collector-base voltage rating of 45 V, collector-emitter voltage rating of 30 V with R_BE ≤ 220 Ω, and a maximum collector current of 4 A. Total power dissipation is 45 W at T_mb ≤ 75 °C, with a maximum junction temperature of 200 °C. Thermal resistance from junction to mounting base is 2.2 K/W, and from mounting base to heatsink is 0.2 K/W. The transistor contains beryllium oxide and requires special handling and disposal procedures.
RF TRANS NPN 20V 1.6GHZ CDFM2
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | LZ1418E100R,114 |
| Product Name | Bipolar RF Transistors |
| Polarity | NPN; NPN |
| Package Type | SOT-443A |
| IC(max) | 4000 milliamps |
| VCEO | 20 volts |
