Ampleon RF FETs, MOSFETs CLP24H4S30PZ

CLP24H4S30PZ is a 30 W GaN-SiC HEMT power transistor in a DFN-7x6.5-6-1 package, designed for continuous wave (CW) RF amplification in the 2400 MHz to 2500 MHz range for industrial, scientific, and medical applications. The device operates at a maximum drain-source voltage of 150 V and a supply voltage of 52 V, with a channel temperature limit of 225 °C. It features internal input matching, high efficiency up to 75% under CW conditions, and is mounted on a PCB with a grounded backside. The part is shipped in a 16 mm tape-and-reel packaging with a minimum order quantity of 1000 pieces. It meets RoHS compliance and is classified as ESD-sensitive with HBM Class 1A and CDM Class C2B ratings.