Ampleon RF FETs, MOSFETs CLL3H0914LS-700U

The CLL3H0914LS-700U is a 700W L-band internally pre-matched GaN-SiC HEMT power transistor designed for operation from 0.9GHz to 1.4GHz. It is housed in an earless flanged ceramic SOT502B package with a drain connection tied to the flange. The device supports drain-source voltages up to 150V and achieves drain efficiencies up to 71% at 1300MHz under pulsed operation with a 3ms pulse width and 10% duty cycle. It exhibits high ruggedness, withstanding a VSWR of 10:1 under rated load conditions. The part meets RoHS compliance and is rated for a maximum active die temperature of 225°C. Thermal resistance from junction to case is 0.24 K/W under standard pulsed test conditions (3ms, 10%).