The CLF3H0060-10U is a 10W broadband RF power GaN-SiC HEMT transistor designed for operation from DC to 6.0GHz in applications such as tactical communication, countermeasures, and radar systems. It is housed in an air-cavity ceramic package (SOT1227A) with drain, gate, and source pins, where the source is connected to the flange. The device operates at a drain-source voltage of up to 150V and handles a maximum channel temperature of 300°C. It achieves 63% drain efficiency at 2.5GHz with 10W output power under pulsed CW conditions (100µs pulse, 10% duty cycle) and exhibits low thermal resistance of 9.0K/W from channel to case. The transistor is unmatched, rugged, and RoHS-compliant.
RF MOSFET GAN HEMT 50V CDFM2
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1603-CLF3H0060-10U-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | SOT-1227A |
