Ampleon Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF CLF1G0060-30U

The CLF1G0060-30 and CLF1G0060S-30 are broadband RF power GaN HEMTs designed for operation from DC to 6.0 GHz, delivering 30 W output power with a drain-source voltage rating of 150 V. They are offered in flanged ceramic packages (SOT1227A and SOT1227B), with thermally enhanced designs supporting a maximum junction temperature of 250 °C and a thermal resistance from junction to case of 3.1 K/W. The devices exhibit excellent ruggedness withstanding a VSWR of 10:1 and operate with a 50 V drain bias. RF performance includes power gain up to 16.6 dB and drain efficiency up to 61% under pulsed conditions, with third-order intermodulation distortion as low as -50 dBc in two-tone operation. These parts are intended for commercial wireless infrastructure, radar, and defense applications.