Ampleon Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF CLF1G0035S-100P

The CLF1G0035S-100P is a 100 W broadband RF power GaN HEMT transistor designed for operation from DC to 3.5 GHz, featuring a flange-mounted earless ceramic package (SOT1228B) with four leads and a source connection tied to the flange. It operates at a drain-source voltage of up to 50 V and exhibits drain efficiency up to 54.4% and power gain up to 14.4 dB under pulsed RF conditions at 2.6 GHz. The device withstands a VSWR of 10:1 and has a maximum junction temperature of 250 °C, with a thermal resistance from junction to case of 1.02 K/W. It meets ESD sensitivity class 1B per JESD22-A114F.